Associate Professor
Electrical & Computer Engineering

Dr. Vishnu K. Lakdawala

217 Kaufman Hall
Norfolk, 23529

Dr. Lakdawala received his BE degree from Bangalore University, India, in 1972, the ME degree from the Indian Institute of Science, India, in 1974, and the Ph.D. from the University of Liverpool, United Kingdom, in 1980, all in electrical engineering. He has worked as an Assistant Development Engineer with M/s Jyoti Limited in their R & D Center in instrument transformers division. He joined the Department of Electrical Engineering at the University of Liverpool as a Senior Research Associate in 1980. In 1982 he joined the Atomic Molecular and High Voltage Physics group at the Oak Ridge National Laboratory as a Post-Doctoral Research Associate. His publications include articles on electron attachment in fluorine compounds, breakdown studies in compressed gases and vacuum, material characterization and simulation studies in compound semiconductors, and high power semiconductor switches. Dr. Lakdawala joined Old Dominion University in the Fall of 1983. He served as the Graduate Program Director from 1988 -98. He is presently the Chief Departmental Advisor and an Associate Professor of Electrical and Computer Engineering.

Ph.D. in Electrical Engineering, University of Liverpool, (1980)

M.E. in Electrical Engineering, Indian Institute of Science, (1974)

B.E. in Electrical Engineering, Bangalore University, (1972)

Electron Beam Controlled Bulk Semiconductor Switch with Cathodoluminescent Electron Activation
Sponsoring Organization:
Date Obtained: 1990-04-10
Electron Beam Controlled Bulk Semiconductor Switch with Cathodoluminescent Electron Activation
Sponsoring Organization:
Date Obtained: 1989-05-16
Optically Controlled Bulk Semiconductor Switch, Not Requiring Radiation to Sustain Conductions
Sponsoring Organization:
Date Obtained: 1989-04-25

Contracts, Grants and Sponsored Research

Lakdawala, V. K., Chaturvedi, S., Akan, O. and Pickering, W. "Implementation Grant: Simulation and Visualization Enhanced Engineering Education" $999,741. September 15, 2005 - August 31, 2008
Lakdawala, V. K. "Joint Digital Library Project" $60,672. October 1, 1997 - September 30, 1998
Albin, S., Mielke, R. R. and Lakdawala, V. K. "Design and Development of a Thin Film Tilt Sensor" $74,181. Private. November 1995 - April 1996
Lakdawala, V. K. and Schoenbach, K. H. "Development of the Bulk Optically Controlled semiconductor switch (BOSS) technology for the pulsed power applications" $680,000. August 1, 1992 - July 31, 1995
Lakdawala, V. K., Schoenbach, K. H. and Gerdin, G. "Electron Beam Controlled Semiconductor Switches" $190,000. January 1, 1990 - August 31, 1993
Lakdawala, V. K. and Schoenbach, K. H. "A Laser Controlled Semiconductor Switch" $550,346. July 1, 1989 - June 30, 1992
Lakdawala, V. K. "Laser Controlled High Power Semiconductor Opening Switch" $15,000. July 23, 1990 - January 23, 1991
Lakdawala, V. K. "Third SDIO/ONR Pulse Power Physics Meeting" $11,470. April 15, 1990 - July 15, 1990
Lakdawala, V. K. and Schoenbach, K. H. "Preparation of Semiconductor Switches" $3,000. April 1, 1989 - March 15, 1990
Lakdawala, V. K. and Schoenbach, K. H. "Electron Beam Controlled Semiconductor Switches" $529,712. June 1, 1986 - May 31, 1989
Lakdawala, V. K. and Schoenbach, K. H. "A Laser Controlled Semiconductor Switch" $585,270. May 16, 1986 - May 15, 1989
Albin, S. and Lakdawala, V. K. "Study of Diamond Film Growth and Properties" $48,874. May 16, 1987 - May 15, 1988
Albin, S. and Lakdawala, V. K. "Electrical and Optical Characteristics of Laser Diodes and Materials" $5,005. January 1, 1987 - May 15, 1987
Lakdawala, V. K. "A Study of Pulsed Surface Flashover in a Vacuum" $3,000. May 1985 - May 1986
Lakdawala, V. K. and Radhakrishnan, D. "Easily Testable Designs and Device Modeling for VLSI" $25,756. September 1984 - August 1985
Lakdawala, V. K. "A Study of Pulsed Surface Flashover in a Vacuum" $39,939. May 1984 - May 1985

Articles

Zhang, H., Gray, W. S., Gonzalez, O. and Lakdawala, V. K. (2008). Output Tracking Performance of a Recoverable Digital Flight Control System in Neutron Environments. IEEE Transactions on Aerospace and Electronic Systems 44 (4).
Zhao, G., Joshi, R., Lakdawala, V. K. and Hjalmarson, H. (2007). Electro-Thermal Simulation Studies for Pulse Induced Energy Absorption in Nano-Crystalline ZnO Varistors. IEEE Trans. Deilectr. and Electr. Insulation.
Zhao, G., Joshi, R., Lakdawala, V. K., Schamiloglu, E. and Hjalmarson, H. (2007). Studies of TiO2 Breakdown Under Pulsed Conditions. J. Appl. Phys. , pp. 101.
Zahorian, S., Swart, W., Lakdawala, V. K., Leathrum Jr, J. F. and Gonzalez, O. (2000). A Modular Approach to using Computer Technology for Education and Training. International Journal of Computer Aided Manufacturing 13 , pp. 286-297.
Thomas, L. and Lakdawala, V. K. (1993). Influence of Arsenic Vapor Pressure During Coper Diffusion on Deep Level Foundation in Silicon Doped Gallium Arsenide. Journal of Electronics Materials 22 (4) , pp. 341-246.
Brinkmann, R., Schoenbach, K., Stoudt, D., Lakdawala, V. K., Gerdin, G. and Kennedy, M. (1991). The Lock-On Effect in Electron-Beam Controlled GaAs Switches. IEEE Trans. Electron Devices 38 , pp. 701.
Van Brunt, R., Misakian, M., Kulkarni, S. and Lakdawala, V. K. (1991). Influence of a Dielectric Barrier on the Stochastic Behavior of Trichel-Pulse Corona. IEEE Transactions on Electrical Insulation 26 (3) , pp. 405-415.
Ko, S., Lakdawala, V. K., Schoenbach, K. and Mazzola, M. (1990). Influence of Copper Doping on the Performance of Optically Controlled GaAs Switches. J. Appl. Phys. 67 , pp. 1124.
Mazzola, M., Schoenbach, K., Lakdawala, V. K. and Roush, R. (1990). Infrared Quenching of Conductivity at High Electric Fields in Bulk, Copper-Compensated, Optically-Activated GaAs Switch. IEEE Trans. Electron Devices 37 , pp. 2499.
Lakdawala, V. K., Schoenbach, K., Barevadia, G., Roush, R. and Mazzola, M. (1990). Photoquenching and Characterization Studies in a Bulk Optically Controlled Semiconductor Switch. Proc. SPIE's OE/Boston '90 , pp. 259.
Stoudt, D., Schoenbach, K., Brinkmann, R., Lakdawala, V. K. and Gerdin, G. (1990). The Recovery Behavior of Semi-insulating GaAs in Electron-Beam Controlled Switches. IEEE Trans. Electron Devices 37 , pp. 2472.
Schoenbach, K., Lakdawala, V. K., Stoudt, D., Smith, T. and Brinkmann, R. (1989). Electron-Beam Controlled High Power Semiconductor Switches. IEEE Trans. on Electron Devices 36 , pp. 1793.
Mazzola, M., Schoenbach, K., Lakdawala, V. K., Germer, R., Loubriel, G. and Zutavern, F. (1989). GaAs-Photoconductive Closing Switches with High Dark Resistance and Microsecond Conductivity Decay. Applied Physics Letters 54 , pp. 742.
Mazzola, M., Schoenbach, K., Lakdawala, V. K. and Ko, S. (1989). Nanosecond Optical Quenching of of Photoconductivity in a Bulk GaAs Switch. Appl. Phys. Lett. 55 , pp. 2102.
Lakdawala, V. K., Hunter, S., Rees, J. and Moruzzi, J. (1989). Operating Conditions and Failure Mechanisms in He-Ne Hollow Cathode Glow Discharge. Journal of Physics D: Applied Physics 22 , pp. 584.
Schoenbach, K., Lakdawala, V. K., Germer, R. and Ko, S. (1988). An Optically Controlled Closing and Opening Switch. Journal of Applied Physics 63 , pp. 2460.
Lakdawala, V. K. and Moruzzi, J. (1982). Attachment, Detachment and Ion-Molecule Reactions in SO2 and SO2-O2 Mixtures. J. Phys D. Appl. Phys. 14 , pp. 2015.
Lakdawala, V. K. and Moruzzi, J. (1980). Measurements of Attachment Coefficients and Ionic Mobilities in SF6-N2 Mixtures Over Low Energy Range -1.2 - 4.0 eV. J. Phys. D: Appl. Phys. 13 , pp. 1439.
Lakdawala, V. K. and Moruzzi, J. (1980). Measurements of Attachment Coefficients in NF3 -N2 and NF3 -Rare Gas Mixtures Using Swarm Techniques. J. Phys. D: Appl. Phys. 13 , pp. 377.
Moruzzi, J. and Lakdawala, V. K. (1979). Electron Attachment in SO2. J. de Physique 40 , pp. C7-11.

Book Chapters

Ko, S., Lakdawala, V. K. and Chen, H. (1987). Analysis of the Cathode Fall of Glow Discharges in He/SF6 Gas Mixtures (pp. 349) Pergamon Press.
Hunter, S., Carter, J., Christophorou, L. and Lakdawala, V. K. (1984). Transport Properties and Dielectric Strengths of Gas Mixtures for Use in Diffuse Discharge Opening Switches (pp. 224) Pergamon Press.

Conference Proceeding

Noel, M., Basappa, P., Lakdawala, V. K. and Nimbole, V. (2008). A Neural network based System for Prediction of Partial Discharge Pulse Height Distribution Parameters (pp. 331-335) Vancouver, British Columbia, Canada: IEEE International Symposium on Electrical Insulation.
Lakdawala, V. K., Noel, M. M.., Basappa, P. and Jambula, A. (2008). Optimization of Complex Electrode System for Use in Electrical Measurements (pp. 308-311) Vancouver, British Columbia, Canada: IEEE International Symposium on Electrical Insulation.
Basappa, P., Lakdawala, V. K., Sarang, B. and Mishra, A. (2008). Simulation of Electric Field distribution around water droplets on outdoor unsulator surfaces (pp. 50-54) Vancouver, British Columbia, Canada: IEEE International Symposium on Electrical Insulation.
Joshi, R., Zhao, G., Song, J. and Lakdawala, V. K. (2007). Electro-Thermal Simulation Studies for Pulsed Voltage Induced Energy Absorption and Potential Failure in Microstructured ZnO Varistors (pp. 631-634) Vancouver, BC: IEEE-CEIDP.
Lakdawala, V. K., Zhang, H., Gonzalez, O. and Gray, W. S. (2006). Markovian Statistical Data Analysis of Single-Event Upsets Triggered by High Intensity Neutrons (pp. 349-353) Cookeville, TN: 38th IEEE Southeastern Symposium on System Theory.
Lakdawala, V. K., Zahorian, S. A.., Gonzalez, O., Kumar, A. and Leathrum Jr, J. F. (2002). An Instrument for Assessing Knowledge Gain in a First Course in Circuit Theory Proceedings of the 32nd ASEE/IEEE Frontiers in Education Conference.
Leathrum Jr, J. F., Gonzalez, O., Zahorian, S. A. and Lakdawala, V. K. (2001). Knowledge Maps for Intelligent Questioning Systems in Engineering Education American Society for Engineering Education Annual Conference & Exposition.
Zahorian, S. A., Lakdawala, V. K., Gonzalez, O. and Leathrum Jr, J. F. (2001). Question Model for Intelligent Questioning Systems in Engineering Education 31st ASEE/IEEE Frontiers in Education Conference.
Swart, W., Zahorian, S., Lakdawala, V. K., Leathrum Jr, J. F. and Gonzalez, O. (1999). A Multi-Use Architecture for Technology-Based Delivery of Curricula (pp. 12c2-12 – 12c-2-17) San Juan, Puerto Rico: 29th Annual ASEE/IEEE Frontiers in Education Conference.
Lakdawala, V. K., Peterkin, F., Kale, M., Schoenbach, K. and Thomas, L. (1993). Fabrication and Photoconductive Switching Performance of High Gain Si Doped Cu Compensated GaAs (pp. 103) Chicago, IL: Sixth BMDO/ONR Pulse Power Conference.
Thomas, L. and Lakdawala, V. K. (1993). Influence of Fabrication Techniques on Gallium Arsenide Switch Photoconductivity (pp. Paper #1873-13) Proceedings SPIE-OE/LASE '93.
Thomas, L. and Lakdawala, V. K. (1992). Study of Diffusion of Copper in Silicon Doped Gallium Arsenide Using Photo-induced Current Transient Spectroscopy for Deep Level Characterization KYOTO: Proceedings of International Conference on Diffusion in Materials DIMAT '92 .
Schoenbach, K. and Lakdawala, V. K. (1992). Optically Activated Opening of Copper-Doped Gallium Arsenide Switches College Park, MD: 5th SDIO/ONR Pulse Power Meeting.
Lakdawala, V. K., Panigrahi, S., Thomas, L. and Brinkmann, R. (1992). Deep Level Characterization Studies for Optically Controlled Semiconductor Switch Materials Using a Novel Technique Los Angeles, CA: Proc. SPIE Conference on Optically Activated Switching.
Schoenbach, K. and Lakdawala, V. K. (1991). Optical Quenching of Photoconductivity as Opening Mechanism in Optoelectronic Switches (pp. 197) Charlottesville, Virginia: International Semiconductor Device Research Symposium.
Thomas, L., Lakdawala, V. K. and Schoenbach, K. (1991). Simulation Studies of Bulk GaAs Switch Photoconductivity Using a Picosecond Laser Pulse (pp. 771) Southeastcon.
Schoenbach, K. and Lakdawala, V. K. (1991). An Optically Activated Semiconductor Opening Switch (pp. 29) Los Angeles, CA: 4th SDIO/ONR Pulsed Power Meeting.
Lakdawala, V. K., Barevadia, G., Panigrahi, S., Thomas, L. and Schoenbach, K. (1991). Deep Level Parameter Studies and Their Significance for Optically Controlled Solid State Switches (pp. 1032) San Diego, CA: 8th IEEE Pulsed Power Conference.
Kennedy, M., Brinkmann, R., Schoenbach, K. and Lakdawala, V. K. (1991). Switching Properties of Electron-Beam Controlled GaAs Pin Diodes (pp. 102) San Diego, CA: 8th IEEE Pulsed Power Conference.
Brinkmann, R., Schoenbach, K., Lakdawala, V. K., Gerdin, G., Stoudt, D. and Roush, R. (1990). High Power Switching with Electron-Beam Controlled Semiconductors (pp. 203) Boston, MA: Proc. SPIE's OE/Boston '90.
Lakdawala, V. K., Schoenbach, K., Roush, R., Barevadia, G. and Mazzola, M. (1990). Photoquenching and Characterization Studies in a Bulk Optically Controlled GaAs Semiconductor Switch (pp. 259) Boston: OPTCON.
Schoenbach, K., Schultz, H., Lakdawala, V. K., Kimpel, B., Brinkmann, R., Germer, R. and Barevadia, G. (1990). The Deep-Level Configuration of GaAs:Si:Cu - A Material For A New Type of Optoelectronic Switch (pp. 428) Aachen, Germany: SPIE Intern. Conf. on Physical Concepts of Materials for Novel Optoelectronic Device Applications.
Brinkmann, R., Schoenbach, K., Roush, R., Stoudt, D., Lakdawala, V. K. and Gerdin, G. (1990). High Power Switching With Electron-Beam Controlled Semiconductors (pp. 203) Boston: OPTCON.
Schoenbach, K., Schulz, H., Lakdawala, V. K., Kimpel, B., Brinkmann, R., Germer, R. and Barevadia, G. (1990). The Deep-Level Configuration of GaAs:Si:Cu - A Material for a New Type of Optoelectronic Switch (pp. 428) Aachen, FRG: Proc. SPIE's Int. Conf. on Physical Concepts of Material for Novel Optoelectronic Device Applications.
Lakdawala, V. K. and Schoenbach, K. (1990). A Laser Controlled Semiconductor Switch Norfolk, VA: Third SDIO/ONR Pulse Power Meeting.
Brinkman, R., Schoenbach, K., Stoudt, D., Lakdawala, V. K., Gerdin, G. and Kennedy, M. (1990). The Lock-On Effect in Electron-Beam Controlled Gallium Arsenide Switches (pp. 334) San Diego, CA: Nineteenth Power Modulator Symposium.
Schoenbach, K., Lakdawala, V. K., Mazzola, M. and Ko, S. (1989). A Novel Optoelectronic Closing and Opening Switch for Pulsed Power (pp. 1079) Washington, D.C.: 24th IEEE Intersociety Energy Conversion Engineering Conference.
Schoenbach, K. and Lakdawala, V. K. (1989). A Laser Controlled Semiconductor Switch (pp. 135) San Diego, CA: 2nd SDIO/ONR Pulsed Power Physics Meeting.
Gerdin, G., Schoenbach, K., Lakdawala, V. K., Smith, T. and Brinkmann, R. (1989). A Band Edge Radiation Generator for Pulsed Power (pp. 857) Monterey, CA: 7th IEEE Pulsed Power Conference.
Mazzola, M., Schoenbach, K., Lakdawala, V. K. and Ko, S. (1989). Investigation of a Photoconductive Closing and Opening Bulk GaAs Semiconductor Switch (pp. 418) Monterey, CA: 7th Pulsed Power Conference.
Ko, S., Lakdawala, V. K., Schoenbach, K. and Mazzola, M. (1989). Optimization Studies of Materials for Optically Controlled Semiconductor Switches (pp. 861) Monterey, CA: 7th Pulsed Power Conference.
Stoudt, D., Schoenbach, K. and Lakdawala, V. K. (1989). The Electrical Characteristics of Semi-Insulating GaAs for High Power Switches (pp. 348) Monterey, CA: 7th IEEE Pulsed Power Conference.
Schoenbach, K., Lakdawala, V. K., Stoudt, D. and Smith, T. (1988). E-Beam Controlled Semiconductor Switch (pp. D2) Norfolk, VA: Workshop on Optically and Electron-Beam Controlled Semiconductor Switches.
Schoenbach, K., Lakdawala, V. K., Schmitt, K. and Powers, T. (1988). Electron-Beam Controlled Semiconductor Switches (pp. 133) Los Angeles, CA: SPIE Proceedings.
Schoenbach, K., Lakdawala, V. K., Schmitt, K. and Powers, T. (1988). Electron-Beam Controlled Semiconductor Switches (pp. 133) Los Angeles, CA: SPIE.
Schoenbach, K., Lakdawala, V. K., Ko, S., Mazzola, M. and Germer, R. (1988). Laser Controlled Semiconductor Closing and Opening Switch Los Angeles, CA: SPIE Proceedings.
Schoenbach, K., Lakdawala, V. K., Ko, S., Mazzola, M. and Germer, R. (1988). Laser Controlled Semiconductor Closing and Opening Switch (pp. 140) Los Angeles, CA: SPIE.
Albin, S., Lakdawala, V. K., Williams, J., Byvik, C. and Buoncristiani Jr., A. (1988). Laser Damage Threshold of Diamond Films (pp. 86) Los Angeles, CA: SPIE Proceedings.
Schoenbach, K., Lakdawala, V. K., Ko, S., Mazzola, M., Stoudt, D. and Smith, T. (1988). Optical and Electron-Beam Control of Semiconductor Switches (pp. 318) Hilton Head, SC: IEEE Conf. Record of the 10th Power Modulator Symposium.
Lakdawala, V. K., Schoenbach, K., Ko, S. and Mazzola, M. (1988). Optical Switching via Deep Levels (pp. B3) Norfolk, VA: Optically and Electron-Beam Controlled Semiconductor Switches.
Gerdin, G., Schoenbach, K., Lakdawala, V. K. and Dharamsi, A. (1988). Subnanosecond Photoelectron Beam Closing Switches (pp. D3) Norfolk, Va: Workshop on Optically and Electron-Beam Controlled Semiconductor Switches.
Schoenbach, K., Lakdawala, V. K., Germer, R., Albin, S., Ko, S. and Mazzola, M. (1987). An Optically Controlled Semiconductor Closing and Opening Switch (pp. 275) Arlington, VA: 6th IEEE Pulsed Power Conf.
Schoenbach, K., Germer, R., Lakdawala, V. K., Schmitt, K. and Albin, S. (1987). Concepts for Electron-Beam and Optical Control of Bulk Semiconductor Switches (pp. 85) Los Angeles, CA: SPIE Conference.
Schoenbach, K., Germer, R., Lakdawala, V. K., Schmitt, K. and Albin, S. (1987). Concepts for Optical and Electron Beam Control of Bulk Semiconductor Switches Lost Angeles, CA: SPIE Proceedings.

Presentations

Lakdawala, V. K. and Gerdin, G. (April 12, 2002). Development of a digital acquisition sytem for partial discharges Graduate Seminar Department of Elec & Comp Engg., ODU.
Stoudt, D., Brinkmann, R., Vahala, L. L., Schoenbach, K. and Lakdawala, V. K. (May , 1989). Investigations into Chaotic Oscillations in GaAs Substrate Bull. Am. Phys. Soc., APS Spring Meeting Washington, DC.
  • 2001: Excellence in Faculty Advising Award, College of Eng & Tech, ODU
  • 1986: Leadership Award, Eta Kappa Nu, Zeta Epsilon chapter
  • 1974: N.R. Khambati Memorial Prize, Indian Institute of Science
  • 1972: GOLD MEDAL, University of Bangalore
  • 1972: State Award, Education & Youth Services Dept. , Karnataka State, India
  • 1971: Institution of Engineers (India) award, Institution of Engineers